Infineon IPD600N25N3 G Type N-Channel MOSFET, 25 A, 250 V Enhancement, 5-Pin TO-252 IPD600N25N3GATMA1

RS 제품 번호:: 171-1948
제조사 부품 번호:: IPD600N25N3GATMA1
제조업체:: Infineon

Infineon IPD600N25N3 G Type N-Channel MOSFET, 25 A, 250 V Enhancement, 5-Pin TO-252 IPD600N25N3GATMA1

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Subtotal (1 pack of 10 units)*

₩35,860.00

20 개 단위 배송 준비 완료
추가로 2026년 8월 26일 부터 8,530 개 단위 배송

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수량	한팩당	한팩당*
10 - 620	₩3,586.00	₩35,860.00
630 - 1240	₩3,496.00	₩34,960.00
1250 +	₩3,442.00	₩34,420.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 171-1948
제조사 부품 번호:: IPD600N25N3GATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	250V
	Series	IPD600N25N3 G
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	136W
	Typical Gate Charge Qg @ Vgs	22nC
	Maximum Operating Temperature	175°C
	Height	2.41mm
	Standards/Approvals	No
	Length	6.73mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 250V
	Series IPD600N25N3 G
	Package Type TO-252
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 136W
	Typical Gate Charge Qg @ Vgs 22nC
	Maximum Operating Temperature 175°C
	Height 2.41mm
	Standards/Approvals No
	Length 6.73mm
	Automotive Standard No

Infineon IPD600N25N3 G Series MOSFET, 250V Maximum Drain Source Voltage, 25A Maximum Continuous Drain Current - IPD600N25N3GATMA1

This MOSFET is a high-voltage N-channel transistor designed for power switching and conversion tasks in compact surface-mounted assemblies. It operates across a wide temperature range and is intended for applications requiring robust drain-source voltage handling and moderate continuous current capability while maintaining efficient switching behaviour.

Features and Benefits:

• 250V drain-source rating enables high-voltage switching applications
• 60 mΩ RDS(on) reduces conduction losses for improved efficiency
• 25A continuous drain current supports sustained load operation
• 22 nC typical gate charge allows effective switching control
• 0.9V forward voltage minimises diode conduction losses
• 136W maximum power dissipation permits high-power handling

Applications

• Suitable for DC-DC converter power stages
• Ideal for motor-drive inverter switches
• Used with switch-mode power supplies for primary switching
• Can be used for battery-management and power distribution
• Suitable for high-voltage relay and solenoid drivers

What thermal environment can it tolerate during operation?

It is rated to function from -55 °C up to 175 °C, allowing use in both cold-start and elevated-temperature installations.

How is it intended to be mounted on assemblies?

The device is provided in a TO-252 package configured for surface-mount installation to ease integration on compact boards.

What gate-drive limitations should be observed?

Gate-source voltage must not exceed 20V to prevent gate overstress, so gate drivers should be chosen accordingly.

How many electrical connections are available for circuit layout?

The component presents five pins, offering multiple connection points for drain, source, gate and mounting considerations.