Infineon IPD25CN10N G Type N-Channel MOSFET, 35 A, 100 V Enhancement, 5-Pin TO-252
- RS 제품 번호:
- 170-2266
- 제조사 부품 번호:
- IPD25CN10NGATMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 reel of 2500 units)*
₩2,129,100.00
일시적 품절
- 2026년 10월 02일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 2500 - 10000 | ₩851.64 | ₩2,130,510.00 |
| 12500 + | ₩834.72 | ₩2,087,740.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 170-2266
- 제조사 부품 번호:
- IPD25CN10NGATMA1
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | IPD25CN10N G | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 26mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 71W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 2.41mm | |
| Width | 7.47 mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series IPD25CN10N G | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 26mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 71W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 2.41mm | ||
Width 7.47 mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
해당 안됨
Infineon MOSFET
The Infineon TO-252-3 surface mount N-channel MOSFET is a new age product with a drain-source resistance of 25mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 300A. It has a maximum gate-source voltage of 20V and drain-source voltage of 100V. It has a maximum power dissipation of 71W. The MOSFET has a driving voltage of 10V. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Easy to design products
• Environmentally friendly
• Excellent gate charge x RDS (on) product (FOM)
• Excellent switching performance
• Halogen free
• Highest power density
• Increased efficiency
• Less paralleling required
• Operating temperature ranges between -55°C and 175°C
• Smallest board space consumption
• Very low Qg and Qgd
• World's lowest RDS (on)
Applications
• Class D audio amplifiers
• Isolated DC-DC converters (telecom and data communication systems
• Motor control for 48V-80V systems (domestic vehicles, power tools, trucks)
• O-ring switches and circuit breakers in 48V systems
• Synchronous rectifier
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC61249-2-21
• JEDEC
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