Infineon OptiMOS 2 Type N-Channel MOSFET, 27 A, 100 V Enhancement, 3-Pin TO-252
- RS 제품 번호:
- 215-2505
- 제조사 부품 번호:
- IPD33CN10NGATMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 reel of 2500 units)*
₩1,828,300.00
재고있음
- 10,000 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 2500 - 10000 | ₩731.32 | ₩1,829,710.00 |
| 12500 + | ₩718.16 | ₩1,793,050.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 215-2505
- 제조사 부품 번호:
- IPD33CN10NGATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | OptiMOS 2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 58W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series OptiMOS 2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 58W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit).
N-channel, normal level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free lead plating
Qualified according to JEDEC for target application
Ideal for high-frequency switching and synchronous rectification
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