Infineon IPD Type N-Channel MOSFET, 67 A, 100 V P, 3-Pin TO-252 IPD12CN10NGATMA1
- RS 제품 번호:
- 258-3835
- 제조사 부품 번호:
- IPD12CN10NGATMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩5,674.50
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 8 | ₩2,837.25 | ₩5,674.50 |
| 10 - 98 | ₩2,691.00 | ₩5,382.00 |
| 100 - 248 | ₩2,535.00 | ₩5,070.00 |
| 250 - 498 | ₩2,359.50 | ₩4,719.00 |
| 500 + | ₩2,174.25 | ₩4,348.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 258-3835
- 제조사 부품 번호:
- IPD12CN10NGATMA1
- 제조업체:
- Infineon
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참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 67A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12.4mΩ | |
| Channel Mode | P | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 67A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12.4mΩ | ||
Channel Mode P | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM
Excellent switching performance
World’s lowest R DS(on)
Environmentally friendly
Increased efficiency
Highest power density
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