Infineon DirectFET, HEXFET Type N-Channel MOSFET, 86 A, 60 V Enhancement, 4-Pin MN

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₩7,697,472.00

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  • 2026년 7월 10일 부터 배송
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4800 - 19200₩1,603.64₩7,700,179.20
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RS 제품 번호:
168-5958
제조사 부품 번호:
IRF6648TRPBF
제조업체:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

86A

Maximum Drain Source Voltage Vds

60V

Package Type

MN

Series

DirectFET, HEXFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

7mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

36nC

Maximum Power Dissipation Pd

89W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.35mm

Width

5.05 mm

Height

0.5mm

Automotive Standard

No

COO (Country of Origin):
CN

DirectFET® Power MOSFET, Infineon


The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in Advanced switching applications.

Industry lowest on-resistance in their respective footprints

Extremely low package resistance to minimise conduction losses

Highly efficient dual-sided cooling significantly improves power density, cost and reliability

Low profile of only 0.7mm

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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