Infineon HEXFET Type N-Channel MOSFET, 81 A, 20 V Enhancement, 2-Pin DirectFET IRF6636TRPBF
- RS 제품 번호:
- 222-4739
- 제조사 부품 번호:
- IRF6636TRPBF
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩22,616.40
일시적 품절
- 2026년 4월 13일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 10 | ₩2,261.64 | ₩22,616.40 |
| 20 - 90 | ₩2,220.28 | ₩22,202.80 |
| 100 - 240 | ₩2,180.80 | ₩21,808.00 |
| 250 - 490 | ₩2,141.32 | ₩21,413.20 |
| 500 + | ₩2,101.84 | ₩21,018.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 222-4739
- 제조사 부품 번호:
- IRF6636TRPBF
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 81A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | HEXFET | |
| Package Type | DirectFET | |
| Mount Type | Surface | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance Rds | 6.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 42W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Forward Voltage Vf | 1V | |
| Length | 4.85mm | |
| Standards/Approvals | No | |
| Height | 0.68mm | |
| Width | 3.95 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 81A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series HEXFET | ||
Package Type DirectFET | ||
Mount Type Surface | ||
Pin Count 2 | ||
Maximum Drain Source Resistance Rds 6.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 42W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Forward Voltage Vf 1V | ||
Length 4.85mm | ||
Standards/Approvals No | ||
Height 0.68mm | ||
Width 3.95 mm | ||
Automotive Standard No | ||
The Infineon design of HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
100% Rg tested Low Conduction and Switching Losses
Ultra Low Package Inductance Ideal for CPU Core DC-DC Converters
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