Infineon DirectFET, HEXFET Type N-Channel MOSFET, 86 A, 60 V Enhancement, 4-Pin MN IRF6648TRPBF
- RS 제품 번호:
- 130-0948
- 제조사 부품 번호:
- IRF6648TRPBF
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩4,756.40
재고있음
- 4,260 개 단위 배송 준비 완료
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 1198 | ₩2,378.20 | ₩4,756.40 |
| 1200 - 2398 | ₩2,321.80 | ₩4,643.60 |
| 2400 + | ₩2,274.80 | ₩4,549.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 130-0948
- 제조사 부품 번호:
- IRF6648TRPBF
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 86A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | MN | |
| Series | DirectFET, HEXFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 89W | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.35mm | |
| Width | 5.05 mm | |
| Height | 0.5mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 86A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type MN | ||
Series DirectFET, HEXFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 89W | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.35mm | ||
Width 5.05 mm | ||
Height 0.5mm | ||
Automotive Standard No | ||
DirectFET® Power MOSFET, Infineon
The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in Advanced switching applications.
Industry lowest on-resistance in their respective footprints
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm
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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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