제조사부품번호

onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 4.7 A, 80 V Enhancement, 8-Pin SOIC

RS 제품 번호:: 166-2865
제조사 부품 번호:: FDS3890
제조업체:: onsemi

onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 4.7 A, 80 V Enhancement, 8-Pin SOIC

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대량 구매 할인 기용 가능

Subtotal (1 reel of 2500 units)*

₩3,337,000.00

재고있음

추가로 2026년 1월 19일 부터 2,500 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
2500 - 2500	₩1,334.80	₩3,335,590.00
5000 - 7500	₩1,308.48	₩3,268,850.00
10000 +	₩1,282.16	₩3,203,050.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 166-2865
제조사 부품 번호:: FDS3890
제조업체:: onsemi

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	4.7A
	Maximum Drain Source Voltage Vds	80V
	Series	PowerTrench
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	82mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2W
	Typical Gate Charge Qg @ Vgs	25nC
	Forward Voltage Vf	0.74V
	Maximum Operating Temperature	175°C
	Transistor Configuration	Isolated
	Width	3.9 mm
	Height	1.575mm
	Length	4.9mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 4.7A
	Maximum Drain Source Voltage Vds 80V
	Series PowerTrench
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 82mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2W
	Typical Gate Charge Qg @ Vgs 25nC
	Forward Voltage Vf 0.74V
	Maximum Operating Temperature 175°C
	Transistor Configuration Isolated
	Width 3.9 mm
	Height 1.575mm
	Length 4.9mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 4.7 A, 80 V Enhancement, 8-Pin SOIC

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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