제조사부품번호

onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 4.7 A, 80 V Enhancement, 8-Pin SOIC FDS3890

RS 제품 번호:: 806-3630
제조사 부품 번호:: FDS3890
제조업체:: onsemi

onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 4.7 A, 80 V Enhancement, 8-Pin SOIC FDS3890

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩15,209.20

재고있음

3,885 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
5 - 620	₩3,041.84	₩15,209.20
625 - 1245	₩2,966.64	₩14,833.20
1250 +	₩2,921.52	₩14,607.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 806-3630
제조사 부품 번호:: FDS3890
제조업체:: onsemi

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모두 선택	제품 정보	값
	브랜드	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4.7A
	Maximum Drain Source Voltage Vds	80V
	Package Type	SOIC
	Series	PowerTrench
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	82mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	25nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	2W
	Forward Voltage Vf	0.74V
	Transistor Configuration	Isolated
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	3.9 mm
	Height	1.575mm
	Length	4.9mm
	Number of Elements per Chip	2
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4.7A
	Maximum Drain Source Voltage Vds 80V
	Package Type SOIC
	Series PowerTrench
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 82mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 25nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 2W
	Forward Voltage Vf 0.74V
	Transistor Configuration Isolated
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 3.9 mm
	Height 1.575mm
	Length 4.9mm
	Number of Elements per Chip 2
	Automotive Standard No

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 4.7 A, 80 V Enhancement, 8-Pin SOIC FDS3890

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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