onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 3.5 A, 100 V Enhancement, 8-Pin SOIC
- RS 제품 번호:
- 166-2652
- 제조사 부품 번호:
- FDS89141
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 2500 units)*
₩5,480,200.00
일시적 품절
- 2026년 5월 01일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 2500 - 2500 | ₩2,192.08 | ₩5,482,080.00 |
| 5000 - 7500 | ₩2,148.84 | ₩5,372,570.00 |
| 10000 + | ₩2,105.60 | ₩5,264,940.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 166-2652
- 제조사 부품 번호:
- FDS89141
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | PowerTrench | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 107mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 31W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 5.1nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Length | 4mm | |
| Width | 5 mm | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 107mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 31W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 5.1nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Length 4mm | ||
Width 5 mm | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
관련된 링크들
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 3.5 A, 100 V Enhancement, 8-Pin SOIC FDS89141
- onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 7 A, 30 V Enhancement, 8-Pin SOIC FDS4935A
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 6.5 A, 20 V Enhancement, 8-Pin SOIC FDS9926A
- onsemi Isolated PowerTrench 2 Type N, Type P-Channel MOSFET, 8.6 A, 30 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 6 A, 40 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 6 A, 30 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 7 A, 30 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 6 A, 40 V Enhancement, 8-Pin SOIC FDS8949