Infineon Isolated OptiMOS™ 2 Type N, Type P-Channel MOSFET, 1.5 A, 30 V Enhancement, 6-Pin TSOP-6 BSL316CH6327XTSA1

RS 제품 번호:: 166-1082
제조사 부품 번호:: BSL316CH6327XTSA1
제조업체:: Infineon

Infineon Isolated OptiMOS™ 2 Type N, Type P-Channel MOSFET, 1.5 A, 30 V Enhancement, 6-Pin TSOP-6 BSL316CH6327XTSA1

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 reel of 3000 units)*

₩912,000.00

추가로 2026년 8월 24일 부터 30,000 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
3000 - 12000	₩304.00	₩912,600.00
15000 +	₩298.00	₩894,600.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 166-1082
제조사 부품 번호:: BSL316CH6327XTSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N, Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1.5A
	Maximum Drain Source Voltage Vds	30V
	Package Type	TSOP-6
	Series	OptiMOS™
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	280mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	2.4nC
	Maximum Power Dissipation Pd	500mW
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.86V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Length	2.9mm
	Standards/Approvals	No
	Height	1mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type Type N, Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1.5A
	Maximum Drain Source Voltage Vds 30V
	Package Type TSOP-6
	Series OptiMOS™
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 280mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 2.4nC
	Maximum Power Dissipation Pd 500mW
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.86V
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Length 2.9mm
	Standards/Approvals No
	Height 1mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

COO (Country of Origin):: MY

Infineon OptiMOS™ Series MOSFET, 30V Maximum Drain Source Voltage, 1.5A Maximum Continuous Drain Current - BSL316CH6327XTSA1

This MOSFET provides compact, surface-mount switching for low-voltage applications in automotive and industrial contexts. It is an isolated dual-channel transistor designed for enhancement-mode operation, offering both N- and P-channel elements in a 6-pin TSOP package. The device supports typical gate-charge behaviour suited to fast switching and operates across a wide temperature span required by harsh environments.

Features and Benefits:

• 30V drain voltage enables low-voltage system switching
• 280mΩ drain-source resistance reduces conduction losses
• 2.4nC typical gate charge for efficient gate drive
• 1.5A continuous drain current for moderate current loads
• 500mW power dissipation prevents overheating in compact layouts
• AEC‑Q101 qualification ensures suitability for automotive use

Applications

• Suitable for DC load switching in vehicle electronics
• Used for complementary push‑pull driver stages
• Ideal for SMD power management on control boards
• Can be used for battery protection and load disconnects
• Appropriate for temperature‑sensitive automotive modules

What pin count and package type does it use?

The component comes in a 6-pin TSOP‑6 surface-mount package optimised for compact assemblies.

How does it perform across temperatures?

It is rated to operate from -55°C up to 150°C, maintaining functionality in extreme ambient conditions.

Is the device single- or multi-element?

The die contains two isolated elements, providing both N- and P-channel configurations on a single chip.

What gate voltage limits must be observed?

Gate-to-source voltage must not exceed 20V to prevent damage to the gate insulation.