Infineon BSL606SN N-Channel MOSFET, 4.5 A, 60 V Enhancement, 6-Pin PG-TSOP-6 BSL606SNH6327XTSA1

RS 제품 번호:: 273-2853
제조사 부품 번호:: BSL606SNH6327XTSA1
제조업체:: Infineon

Infineon BSL606SN N-Channel MOSFET, 4.5 A, 60 V Enhancement, 6-Pin PG-TSOP-6 BSL606SNH6327XTSA1

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Subtotal (1 reel of 3000 units)*

₩1,170,000.00

일시적 품절

2027년 5월 24일 부터 배송

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수량	한팩당	릴당*
3000 +	₩390.00	₩1,171,200.00

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RS 제품 번호:: 273-2853
제조사 부품 번호:: BSL606SNH6327XTSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	4.5A
	Maximum Drain Source Voltage Vds	60V
	Series	BSL606SN
	Package Type	PG-TSOP-6
	Mount Type	Surface
	Pin Count	6
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	2W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	3.7nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	150°C
	Width	40mm
	Standards/Approvals	AEC-Q101
	Length	40mm
	Height	1.5mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 4.5A
	Maximum Drain Source Voltage Vds 60V
	Series BSL606SN
	Package Type PG-TSOP-6
	Mount Type Surface
	Pin Count 6
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 2W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 3.7nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 150°C
	Width 40mm
	Standards/Approvals AEC-Q101
	Length 40mm
	Height 1.5mm
	Automotive Standard AEC-Q101

Datasheet - BSL606SNH6327XTSA1

Infineon BSL606SN Series MOSFET, 60V Maximum Drain-Source Voltage, 4.5A Maximum Continuous Drain Current - BSL606SNH6327XTSA1

This n-channel enhancement MOSFET is designed for surface-mounted power switching in automotive environments. It delivers moderate current handling and voltage capability with a low forward voltage characteristic, suitable for control and load-switching roles across a wide ambient range. The device is packaged for Compact assembly and meets automotive stress-test qualification for use in temperature-extreme applications.

Features and Benefits:

• 60V Maximum Drain-Source Voltage provides robust voltage headroom
• 4.5A Maximum Continuous Drain Current enables moderate current switching
• 1.1V Forward Voltage minimises conduction losses during operation
• 3.7nC Typical Gate Charge enables Faster switching response
• 2W Maximum Power Dissipation allows continuous thermal handling

Applications

• Suitable for automotive power distribution modules
• Ideal for DC load switching in control units
• Used with Compact surface assemblies requiring space savings
• Can be used for motor driver low-side switching tasks

What gate drive limitations should I consider?

The device accepts up to 20V between gate and source, so gate-drive circuits must remain within this limit.

How does the device handle temperature extremes?

It operates across a range from -55°C to 150°C, allowing use in harsh ambient and under‑bonnet conditions.

What mounting method is required for assembly?

It is intended for surface mounting in a PG-TSOP-6 package to suit automated PCB assembly.

What channel and mode does it use for switching?

The transistor uses an n-type channel in enhancement mode for conventional MOSFET switching behaviour.

Are there specific industry approvals for automotive use?

It conforms to AEC‑Q101 qualification for acceptance in automotive electronic applications.