Vishay Si4431CDY Type P-Channel MOSFET, 7.2 A, 30 V Enhancement, 8-Pin SOIC SI4431CDY-T1-GE3
- RS 제품 번호:
- 165-7252
- 제조사 부품 번호:
- SI4431CDY-T1-GE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
현재 비가용
죄송합니다. 언제 재입고될지 모릅니다.
- RS 제품 번호:
- 165-7252
- 제조사 부품 번호:
- SI4431CDY-T1-GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 7.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | Si4431CDY | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 49mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 4.2W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Forward Voltage Vf | -0.71V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Height | 1.55mm | |
| Width | 4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 7.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series Si4431CDY | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 49mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 4.2W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Forward Voltage Vf -0.71V | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Height 1.55mm | ||
Width 4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
관련된 링크들
- Vishay Si4431CDY Type P-Channel MOSFET, 7.2 A, 30 V Enhancement, 8-Pin SOIC SI4431CDY-T1-GE3
- Vishay Si4403CDY Type P-Channel MOSFET, 13.4 A, 20 V Enhancement, 8-Pin SOIC SI4403CDY-T1-GE3
- Vishay SI9945CDY Dual N-Channel MOSFET, 7.9 A, 60 V Enhancement, 8-Pin SO-8 SI9945CDY-T1-GE3
- Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 4 A, 20 V Enhancement, 8-Pin SOIC SI9933CDY-T1-GE3
- Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 6 A, 30 V Enhancement, 8-Pin SOIC SI4532CDY-T1-GE3
- Vishay SQ Rugged Type P-Channel MOSFET, 6.2 A, 30 V Enhancement, 8-Pin SOIC SQ4431EY-T1_GE3
- Vishay Si4134DY N-Channel MOSFET, 14 A, 30 V Enhancement, 8-Pin SOIC Si4134DY-T1-GE3
- Vishay Si4178DY N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC SI4178DY-T1-GE3