Vishay SQ Rugged Type P-Channel MOSFET, 6.2 A, 30 V Enhancement, 8-Pin SOIC SQ4431EY-T1_GE3
- RS 제품 번호:
- 165-6285
- 제조사 부품 번호:
- SQ4431EY-T1_GE3
- 제조업체:
- Vishay
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- RS 제품 번호:
- 165-6285
- 제조사 부품 번호:
- SQ4431EY-T1_GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SQ Rugged | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | -1.1V | |
| Maximum Power Dissipation Pd | 6W | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.55mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Width | 4mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SQ Rugged | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf -1.1V | ||
Maximum Power Dissipation Pd 6W | ||
Maximum Operating Temperature 175°C | ||
Height 1.55mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Width 4mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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