Vishay Si4178DY Type N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC

RS 제품 번호:: 165-7249
제조사 부품 번호:: SI4178DY-T1-GE3
제조업체:: Vishay

Vishay Si4178DY Type N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC

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Subtotal (1 reel of 2500 units)*

₩1,287,000.00

일시적 품절

2026년 10월 27일 부터 배송

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2500 - 10000	₩514.80	₩1,286,025.00
12500 +	₩503.10	₩1,260,187.50

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RS 제품 번호:: 165-7249
제조사 부품 번호:: SI4178DY-T1-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	30V
	Series	Si4178DY
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	33mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	5W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	25V
	Typical Gate Charge Qg @ Vgs	7.5nC
	Forward Voltage Vf	0.85V
	Maximum Operating Temperature	150°C
	Height	1.55mm
	Width	4mm
	Standards/Approvals	RoHS
	Length	5mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 30V
	Series Si4178DY
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 33mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 5W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 25V
	Typical Gate Charge Qg @ Vgs 7.5nC
	Forward Voltage Vf 0.85V
	Maximum Operating Temperature 150°C
	Height 1.55mm
	Width 4mm
	Standards/Approvals RoHS
	Length 5mm
	Automotive Standard No

COO (Country of Origin):: CN

Vishay Si4178DY Series MOSFET, 30V Maximum Drain Source Voltage, 12A Maximum Continuous Drain Current - SI4178DY-T1-GE3

This is a surface-mount N-channel MOSFET intended for power switching and high-current applications within electronic systems. It operates as an enhancement-mode transistor and is supplied in an SOIC-8 package for PCB mounting. The device supports moderate voltage switching and is suitable for designs requiring Compact power transistors with controlled gate-charge characteristics.

Features and Benefits:

• 30V maximum drain voltage enabling low-voltage power switching • 12A continuous drain current for handling high load currents • 33mΩ drain-source resistance for reduced conduction losses • 7.5nC typical gate charge for Faster switching transitions • 5W power dissipation capacity for sustained thermal performance • -55°C to 150°C operating range for wide thermal tolerance

Applications

• Suitable for DC power distribution switches in automation panels • Ideal for motor driver low-side switching in industrial drives • Used for load switching in power-management circuits for control systems • Can be used for synchronous rectification in Compact power converters • Suitable for battery protection and power-path control in machinery

What gate-voltage limits should be observed during design?

The gate-source voltage must not exceed ±25V to prevent gate-oxide stress and ensure reliable switching.

How should thermal management be approached on the PCB?

Given a 5W dissipation rating, provide adequate copper area and thermal vias to lower junction temperature during continuous high-current operation.

What pin-count and package considerations affect layout?

The device arrives in an 8-pin SOIC package, so track widths and pad spacing should accommodate surface-mount assembly and thermal conduction.

What electrical characteristic governs switching speed in Pulse applications?

The typical gate charge of 7.5nC is the key parameter influencing drive requirements and switching transition times when selecting gate drivers.