Nexperia Type P-Channel MOSFET, -5.6 A, -20 V Enhancement, 3-Pin SOT-23 PMV27UPEAR

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Subtotal (1 pack of 25 units)*

₩14,527.50

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25 - 725₩581.10₩14,547.00
750 - 1475₩567.45₩14,176.50
1500 +₩557.70₩13,962.00

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포장 옵션
RS 제품 번호:
153-1876
제조사 부품 번호:
PMV27UPEAR
제조업체:
Nexperia
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브랜드

Nexperia

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-5.6A

Maximum Drain Source Voltage Vds

-20V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

63mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

14.7nC

Maximum Power Dissipation Pd

4.15W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1mm

Length

3mm

Automotive Standard

AEC-Q101

P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.

20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Low threshold voltage

Very fast switching

Enhanced power dissipation capability: Ptot = 980 mW

ElectroStatic Discharge (ESD) protection 2 kV HBM

AEC-Q101 qualified

LED driver

Power management

High-side loadswitch

Switching circuits

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