제조사부품번호

Nexperia PMV20XNE Type N-Channel MOSFET, 7.2 A, 30 V Enhancement, 3-Pin SOT-23

RS 제품 번호:: 170-4865
제조사 부품 번호:: PMV20XNER
제조업체:: Nexperia

Nexperia PMV20XNE Type N-Channel MOSFET, 7.2 A, 30 V Enhancement, 3-Pin SOT-23

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대량 구매 할인 기용 가능

Subtotal (1 reel of 3000 units)*

₩626,040.00

일시적 품절

2026년 5월 27일 부터 3,000 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
3000 - 3000	₩208.68	₩627,168.00
6000 - 9000	₩204.92	₩614,760.00
12000 +	₩201.16	₩602,352.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 170-4865
제조사 부품 번호:: PMV20XNER
제조업체:: Nexperia

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Nexperia
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	7.2A
	Maximum Drain Source Voltage Vds	30V
	Series	PMV20XNE
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	38mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	12.4nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	12 V
	Maximum Power Dissipation Pd	6.94W
	Maximum Operating Temperature	150°C
	Height	1mm
	Length	3mm
	Width	1.4 mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Nexperia
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 7.2A
	Maximum Drain Source Voltage Vds 30V
	Series PMV20XNE
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 38mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 12.4nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 12 V
	Maximum Power Dissipation Pd 6.94W
	Maximum Operating Temperature 150°C
	Height 1mm
	Length 3mm
	Width 1.4 mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: CN

Robust interfacing between asynchronous and synchronous systems. Flip-flops are Basic storage elements in digital electronics. By only allowing the output to change on an edge transition, flip-flops provide a robust Interface between asynchronous and synchronous systems. With a choice of either positive or negative edge triggered options they provide added design flexibility.

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Low threshold voltage

Enhanced power dissipation capability of 1200 mW

ElectroStatic Discharge (ESD) protection: 2 kV HBM

Target applications

Relay driver

High-speed line driver

Low-side load switch

Switching circuits

Nexperia PMV20XNE Type N-Channel MOSFET, 7.2 A, 30 V Enhancement, 3-Pin SOT-23

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