Nexperia PMV16XN Type N-Channel MOSFET, 8.6 A, 20 V Enhancement, 3-Pin SOT-23 PMV16XNR
- RS 제품 번호:
- 170-5355
- 제조사 부품 번호:
- PMV16XNR
- 제조업체:
- Nexperia
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대량 구매 할인 기용 가능
Subtotal (1 pack of 50 units)*
₩18,706.00
일시적 품절
- 2026년 5월 20일 부터 3,000 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 50 - 700 | ₩374.12 | ₩18,668.40 |
| 750 - 1450 | ₩364.72 | ₩18,198.40 |
| 1500 + | ₩359.08 | ₩17,916.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 170-5355
- 제조사 부품 번호:
- PMV16XNR
- 제조업체:
- Nexperia
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | PMV16XN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 6.94W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Typical Gate Charge Qg @ Vgs | 13.4nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Width | 1.4 mm | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series PMV16XN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 6.94W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Typical Gate Charge Qg @ Vgs 13.4nC | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Width 1.4 mm | ||
Length 3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Switching solutions for your portable designs. Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Low threshold voltage
Very fast switching
Enhanced power dissipation capability of 1200 mW
Target applications
LED driver
Power management
Low-side load switch
Switching circuits
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