Nexperia Single 1 N-Channel MOSFET, 3.2 A, 20 V Enhancement, 4-Pin DFN PMXB43UNEZ

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RS 제품 번호:
153-0741
제조사 부품 번호:
PMXB43UNEZ
제조업체:
Nexperia
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브랜드

Nexperia

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.2A

Maximum Drain Source Voltage Vds

20V

Package Type

DFN

Mount Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance Rds

120mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

8V

Maximum Power Dissipation Pd

8.33W

Transistor Configuration

Single

Maximum Operating Temperature

150°C

Height

360μm

Width

1.05mm

Length

1.15mm

Number of Elements per Chip

1

N-channel MOSFETs ≤ 20 V, Get the optimum switching solutions for your portable designs, Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.

20 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm

Exposed drain pad for excellent thermal conduction

Very low Drain-Source on-state resistance RDSon = 42 mΩ

1 kV ESD protected

Low-side load switch and charging switch for portable devices

Power management in battery-driven portables

LED driver

DC-to-DC converters

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