제조사부품번호

Nexperia Dual Trench MOSFET 2 Type N-Channel Trench MOSFET, 260 mA, 60 V Enhancement, 8-Pin DFN NX7002BKXBZ

RS 제품 번호:: 153-1880
제조사 부품 번호:: NX7002BKXBZ
제조업체:: Nexperia

Nexperia Dual Trench MOSFET 2 Type N-Channel Trench MOSFET, 260 mA, 60 V Enhancement, 8-Pin DFN NX7002BKXBZ

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대량 구매 할인 기용 가능

Subtotal (1 pack of 50 units)*

₩16,920.00

일시적 품절

2026년 7월 06일 부터 배송

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수량	한팩당	한팩당*
50 - 1200	₩338.40	₩16,882.40
1250 - 2450	₩329.00	₩16,450.00
2500 +	₩323.36	₩16,205.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 153-1880
제조사 부품 번호:: NX7002BKXBZ
제조업체:: Nexperia

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Nexperia
	Channel Type	Type N
	Product Type	Trench MOSFET
	Maximum Continuous Drain Current Id	260mA
	Maximum Drain Source Voltage Vds	60V
	Series	Trench MOSFET
	Package Type	DFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	5.7Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	1nC
	Minimum Operating Temperature	150°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	4032mW
	Transistor Configuration	Dual
	Maximum Operating Temperature	-55°C
	Width	1.05 mm
	Standards/Approvals	No
	Length	1.15mm
	Height	0.36mm
	Number of Elements per Chip	2
	Automotive Standard	No

	모두 선택
	브랜드 Nexperia
	Channel Type Type N
	Product Type Trench MOSFET
	Maximum Continuous Drain Current Id 260mA
	Maximum Drain Source Voltage Vds 60V
	Series Trench MOSFET
	Package Type DFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 5.7Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 1nC
	Minimum Operating Temperature 150°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 4032mW
	Transistor Configuration Dual
	Maximum Operating Temperature -55°C
	Width 1.05 mm
	Standards/Approvals No
	Length 1.15mm
	Height 0.36mm
	Number of Elements per Chip 2
	Automotive Standard No

N-channel MOSFETs 40 V - 60 V, Logic- and Standard Level MOSFETs in a variety of packages, Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).

60 V, dual N-channel Trench MOSFET, Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic-level compatible

Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

Nexperia Dual Trench MOSFET 2 Type N-Channel Trench MOSFET, 260 mA, 60 V Enhancement, 8-Pin DFN NX7002BKXBZ

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