제조사부품번호

Nexperia Type N-Channel MOSFET, 600 mA, 20 V Enhancement, 8-Pin DFN PMDXB600UNEZ

RS 제품 번호:: 151-3178
제조사 부품 번호:: PMDXB600UNEZ
제조업체:: Nexperia

Nexperia Type N-Channel MOSFET, 600 mA, 20 V Enhancement, 8-Pin DFN PMDXB600UNEZ

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 pack of 25 units)*

₩8,648.00

일시적 품절

2026년 7월 06일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
25 - 1225	₩345.92	₩8,666.80
1250 - 2475	₩338.40	₩8,441.20
2500 +	₩332.76	₩8,309.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 151-3178
제조사 부품 번호:: PMDXB600UNEZ
제조업체:: Nexperia

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Nexperia
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	600mA
	Maximum Drain Source Voltage Vds	20V
	Package Type	DFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Power Dissipation Pd	4.03W
	Typical Gate Charge Qg @ Vgs	0.4nC
	Maximum Operating Temperature	150°C
	Height	0.4mm
	Standards/Approvals	No
	Width	1.05 mm
	Length	1.15mm
	Automotive Standard	No

	모두 선택
	브랜드 Nexperia
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 600mA
	Maximum Drain Source Voltage Vds 20V
	Package Type DFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Power Dissipation Pd 4.03W
	Typical Gate Charge Qg @ Vgs 0.4nC
	Maximum Operating Temperature 150°C
	Height 0.4mm
	Standards/Approvals No
	Width 1.05 mm
	Length 1.15mm
	Automotive Standard No

N-channel MOSFETs ≤ 20 V, Get the optimum switching solutions for your portable designs, Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.

20 V, dual N-channel Trench MOSFET, Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm

Exposed drain pad for excellent thermal conduction

ElectroStatic Discharge (ESD) protection > 1 kV HBM

Drain-source on-state resistance RDSon = 470 mΩ

Nexperia Type N-Channel MOSFET, 600 mA, 20 V Enhancement, 8-Pin DFN PMDXB600UNEZ

관련된 링크들