Nexperia N-Channel MOSFET, 600 mA, 20 V Enhancement, 8-Pin DFN PMDXB600UNEZ

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

모든 MOSFETs 열람하기
현재 비가용
RS는 이 제품을 더 이상 판매하지 않습니다.
포장 옵션
RS 제품 번호:
151-3178
제조사 부품 번호:
PMDXB600UNEZ
제조업체:
Nexperia
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Nexperia

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

600mA

Maximum Drain Source Voltage Vds

20V

Package Type

DFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

0.4nC

Maximum Power Dissipation Pd

4.03W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

8V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

1.15mm

Width

1.05mm

Height

400μm

Automotive Standard

No

N-channel MOSFETs ≤ 20 V, Get the optimum switching solutions for your portable designs, Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.

20 V, dual N-channel Trench MOSFET, Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm

Exposed drain pad for excellent thermal conduction

ElectroStatic Discharge (ESD) protection > 1 kV HBM

Drain-source on-state resistance RDSon = 470 mΩ

관련된 링크들