제조사부품번호

Nexperia Type P-Channel MOSFET, -3.3 A, -20 V Enhancement, 3-Pin SOT-23 PMV65XPEAR

RS 제품 번호:: 151-3159
제조사 부품 번호:: PMV65XPEAR
제조업체:: Nexperia

Nexperia Type P-Channel MOSFET, -3.3 A, -20 V Enhancement, 3-Pin SOT-23 PMV65XPEAR

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RS 제품 번호:: 151-3159
제조사 부품 번호:: PMV65XPEAR
제조업체:: Nexperia

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Nexperia
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-3.3A
	Maximum Drain Source Voltage Vds	-20V
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	125mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	12 V
	Maximum Power Dissipation Pd	6.25W
	Typical Gate Charge Qg @ Vgs	5nC
	Maximum Operating Temperature	150°C
	Length	3mm
	Height	1.1mm
	Width	1.4 mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Nexperia
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -3.3A
	Maximum Drain Source Voltage Vds -20V
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 125mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 12 V
	Maximum Power Dissipation Pd 6.25W
	Typical Gate Charge Qg @ Vgs 5nC
	Maximum Operating Temperature 150°C
	Length 3mm
	Height 1.1mm
	Width 1.4 mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Automotive MOSFETs, The world's largest portfolio of AEC-Q101 qualified power MOSFETs, An in-depth understanding of automotive system requirements and focused technical capability enables Nexperia to provide power semiconductor solutions across a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia Power Semiconductors can provide the answer to many automotive system power problems.

AEC-Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175°C rating

20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Very fast switching

Enhanced power dissipation capability: Ptot = 890 mW

ElectroStatic Discharge (ESD) protection 2 kV HBM

AEC-Q101 qualified

Nexperia Type P-Channel MOSFET, -3.3 A, -20 V Enhancement, 3-Pin SOT-23 PMV65XPEAR

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