Vishay SiSS N-Channel MOSFET, 50.3 A, 80 V N, 8-Pin 1212-8S SISS32ADN-T1-BE3
- RS 제품 번호:
- 878-900
- 제조사 부품 번호:
- SISS32ADN-T1-BE3
- 제조업체:
- Vishay
N
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tape of 1 unit)*
₩3,350.00
일시적 품절
- 2027년 3월 02일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | ₩3,350.00 |
| 10 - 24 | ₩2,188.00 |
| 25 - 99 | ₩1,296.00 |
| 100 - 499 | ₩1,250.00 |
| 500 + | ₩1,228.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 878-900
- 제조사 부품 번호:
- SISS32ADN-T1-BE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50.3A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | 1212-8S | |
| Series | SiSS | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0087Ω | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 65.7W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 0.83mm | |
| Length | 3.4mm | |
| Width | 3.4mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50.3A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type 1212-8S | ||
Series SiSS | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0087Ω | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 65.7W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 0.83mm | ||
Length 3.4mm | ||
Width 3.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay MOSFET delivers high performance in power management applications. Designed for efficiency, it excels in synchronous rectification and as a primary side switch in DC/DC converters, ensuring reliable energy control.
TrenchFET Gen IV technology provides enhanced efficiency
Very low on-state resistance minimises power losses
Comprehensive testing guarantees reliability and performance
Versatile package design suits various mounting requirements
관련된 링크들
- Vishay SiSS N channel-Channel MOSFET, 50.3 A, 80 V N, 8-Pin 1212-8S SISS32ADN-T1-UE3
- Vishay SiSS32ADN Type N-Channel MOSFET, 63 A, 80 V Enhancement, 8-Pin PowerPAK 1212 SiSS32ADN-T1-GE3
- Vishay SiSS30ADN Type N-Channel MOSFET, 54.7 A, 80 V Enhancement, 8-Pin PowerPAK 1212 SiSS30ADN-T1-GE3
- Vishay SISS52DN N channel-Channel MOSFET, 162 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS52DN-T1-BE3
- Vishay SISS64DN N channel-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS64DN-T1-BE3
- Vishay SISS26DN N channel-Channel MOSFET, 60 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8S SISS26DN-T1-BE3
- Vishay SISS30DN N channel-Channel MOSFET, 54.7 A, 80 V Enhancement, 8-Pin PowerPAK 1212-8S SISS30DN-T1-BE3
- Vishay SISS N channel-Channel Single MOSFETs, 52 A, 60 V Enhancement Mode, 8-Pin PowerPAK 1212-8SLW SISS862ADN-T1-UE3