Vishay TrenchFET N-Channel Power MOSFET, 45.3 A, 70 V N, 8-Pin PowerPAK SISS178LDN-T1-BE3
- RS 제품 번호:
- 851-509
- 제조사 부품 번호:
- SISS178LDN-T1-BE3
- 제조업체:
- Vishay
N
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tape of 1 unit)*
₩1,518.00
재고있음
- 6,000 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
Tape(s) | Per Tape |
|---|---|
| 1 - 24 | ₩1,518.00 |
| 25 - 99 | ₩1,006.00 |
| 100 + | ₩580.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 851-509
- 제조사 부품 번호:
- SISS178LDN-T1-BE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 45.3A | |
| Maximum Drain Source Voltage Vds | 70V | |
| Package Type | PowerPAK | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.013Ω | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 18.7nC | |
| Maximum Power Dissipation Pd | 39W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.05mm | |
| Standards/Approvals | AEC-Q101 Qualified | |
| Height | 1.04mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 45.3A | ||
Maximum Drain Source Voltage Vds 70V | ||
Package Type PowerPAK | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.013Ω | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 18.7nC | ||
Maximum Power Dissipation Pd 39W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.05mm | ||
Standards/Approvals AEC-Q101 Qualified | ||
Height 1.04mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- IL
The Vishay N-Channel MOSFET offers high efficiency in power management, featuring a robust construction that supports various electrical demands in Advanced electronic applications.
Rated for a drain-source voltage of 70 V, ensuring reliable performance in diverse applications
Exhibits low on-resistance with a maximum of 0.0109 Ω at 4.5 V, enhancing energy efficiency
Designed to handle continuous drain currents up to 42.3 A, supporting high-power operations
Incorporates a single Pulse avalanche rating of 15 A, safeguarding against voltage transients
관련된 링크들
- Vishay TrenchFET N channel-Channel Power MOSFET, 42.3 A, 70 V N, 8-Pin PowerPAK SISS176LDN-T1-BE3
- Vishay SISS178LDN Type N-Channel Single MOSFETs, 45.3 A, 70 V Enhancement, 8-Pin PowerPAK SISS178LDN-T1-UE3
- Vishay SISS178LDN Type N-Channel Single MOSFETs, 45.3 A, 70 V Enhancement, 8-Pin PowerPAK
- Vishay SISS32LDN Type N-Channel Single MOSFETs, 63 A, 80 V Enhancement, 8-Pin PowerPAK SISS32LDN-T1-BE3
- Vishay SISS32LDN Type N-Channel Single MOSFETs, 63 A, 80 V Enhancement, 8-Pin PowerPAK
- Vishay SiSS76LDN Type N-Channel MOSFET, 67.4 A, 70 V Enhancement, 8-Pin PowerPAK 1212 SiSS76LDN-T1-GE3
- Vishay SISS176LDN Type N-Channel Single MOSFETs, 42.3 A, 70 V Enhancement, 8-Pin PowerPAK SISS176LDN-T1-UE3
- Vishay SISS176LDN Type N-Channel Single MOSFETs, 42.3 A, 70 V Enhancement, 8-Pin PowerPAK
