Vishay SiSS76LDN Type N-Channel MOSFET, 67.4 A, 70 V Enhancement, 8-Pin PowerPAK 1212 SiSS76LDN-T1-GE3
- RS 제품 번호:
- 210-5018
- 제조사 부품 번호:
- SiSS76LDN-T1-GE3
- 제조업체:
- Vishay
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대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩12,351.60
마지막 RS 재고
- 최종적인 7,990 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 740 | ₩1,235.16 | ₩12,351.60 |
| 750 - 1490 | ₩1,205.08 | ₩12,050.80 |
| 1500 + | ₩1,186.28 | ₩11,862.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 210-5018
- 제조사 부품 번호:
- SiSS76LDN-T1-GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 67.4A | |
| Maximum Drain Source Voltage Vds | 70V | |
| Package Type | PowerPAK 1212 | |
| Series | SiSS76LDN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 57W | |
| Typical Gate Charge Qg @ Vgs | 22.3nC | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.4mm | |
| Standards/Approvals | No | |
| Width | 3.4 mm | |
| Height | 0.83mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 67.4A | ||
Maximum Drain Source Voltage Vds 70V | ||
Package Type PowerPAK 1212 | ||
Series SiSS76LDN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 57W | ||
Typical Gate Charge Qg @ Vgs 22.3nC | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 3.4mm | ||
Standards/Approvals No | ||
Width 3.4 mm | ||
Height 0.83mm | ||
Automotive Standard No | ||
The Vishay N-Channel 70 V (D-S) MOSFET has PowerPAK 1212-8S package type.
TrenchFET® Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
100 % Rg and UIS tested
관련된 링크들
- Vishay SiSS76LDN Type N-Channel MOSFET, 67.4 A, 70 V Enhancement, 8-Pin PowerPAK 1212
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- Vishay SiSS30LDN Type N-Channel MOSFET, 55.5 A, 80 V Enhancement, 8-Pin PowerPAK 1212
- Vishay SiSS26LDN Type N-Channel MOSFET, 81.2 A, 60 V Enhancement, 8-Pin PowerPAK 1212
- Vishay SISS178LDN Type N-Channel Single MOSFETs, 45.3 A, 70 V Enhancement, 8-Pin PowerPAK SISS178LDN-T1-UE3
- Vishay SISS176LDN Type N-Channel Single MOSFETs, 42.3 A, 70 V Enhancement, 8-Pin PowerPAK SISS176LDN-T1-UE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET, 92.5 A, 60 V Enhancement, 8-Pin PowerPAK 1212 SiSS22LDN-T1-GE3
