Vishay SISS176LDN N-Channel Single MOSFETs, 42.3 A, 70 V Enhancement, 8-Pin PowerPAK SISS176LDN-T1-UE3
- RS 제품 번호:
- 653-099
- 제조사 부품 번호:
- SISS176LDN-T1-UE3
- 제조업체:
- Vishay
Subtotal (1 reel of 3000 units)*
₩2,268,000.00
마지막 RS 재고
- 최종적인 6,000 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 + | ₩756.00 | ₩2,267,400.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
대체품
이 제품은 현재 공급 불가입니다. 아래 제품들은 당사에서 추천드리는 대체품입니다.
1 개가 들어있는 1테이프
₩1,200.00
- RS 제품 번호:
- 653-099
- 제조사 부품 번호:
- SISS176LDN-T1-UE3
- 제조업체:
- Vishay
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 42.3A | |
| Maximum Drain Source Voltage Vds | 70V | |
| Package Type | PowerPAK | |
| Series | SISS176LDN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0125Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 39W | |
| Typical Gate Charge Qg @ Vgs | 9.2nC | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 410μm | |
| Width | 3.3mm | |
| Length | 3.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 42.3A | ||
Maximum Drain Source Voltage Vds 70V | ||
Package Type PowerPAK | ||
Series SISS176LDN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0125Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 39W | ||
Typical Gate Charge Qg @ Vgs 9.2nC | ||
Maximum Gate Source Voltage Vgs 12V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Height 410μm | ||
Width 3.3mm | ||
Length 3.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay TrenchFET Gen IV N-Channel Power MOSFET rated for 70 V drain-source voltage and 42.3 A continuous drain current. It features a Compact PowerPAK 1212-8S surface-mount package, making it Ideal for DC/DC converters, synchronous rectification, motor control, and load switching.
Pb Free
Halogen free
RoHS compliant
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