Vishay TrenchFET N-Channel Power MOSFET, 40 A, 80 V N, 8-Pin SO-8 SIDR178DP-T1-RE3
- RS 제품 번호:
- 851-501
- 제조사 부품 번호:
- SIDR178DP-T1-RE3
- 제조업체:
- Vishay
N
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit, on tapes of 1)*
₩5,562.00
일시적 품절
- 2027년 3월 09일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | ₩5,562.00 |
| 10 - 24 | ₩3,618.00 |
| 25 - 99 | ₩2,144.00 |
| 100 - 499 | ₩2,100.00 |
| 500 + | ₩2,032.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 851-501
- 제조사 부품 번호:
- SIDR178DP-T1-RE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0029Ω | |
| Channel Mode | N | |
| Minimum Operating Temperature | 55°C | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.25mm | |
| Standards/Approvals | AEC-Q101 Qualified | |
| Height | 1.04mm | |
| Length | 6.05mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0029Ω | ||
Channel Mode N | ||
Minimum Operating Temperature 55°C | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Width 5.25mm | ||
Standards/Approvals AEC-Q101 Qualified | ||
Height 1.04mm | ||
Length 6.05mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- TW
The Vishay high-performance N-Channel MOSFET, designed to enable efficient power switching applications. Its capabilities ensure reliable operation within varying voltage and current ranges.
TrenchFET technology ensures low on-resistance and high efficiency
Top side cooling improves thermal transfer capabilities
Lead-free and halogen-free construction supports environmental compliance
Fully tested for reliability with 100% R and UIS tests
관련된 링크들
- Vishay SiDR170DP N-Channel MOSFET, 95 A, 100 V Enhancement, 8-Pin SO-8 SiDR170DP-T1-RE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin SO-8 SIDR638DP-T1-RE3
- Vishay SiDR220DP Type N-Channel MOSFET, 100 A, 25 V Enhancement, 8-Pin SO-8 SIDR220DP-T1-RE3
- Vishay SiDR392DP Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SIDR392DP-T1-RE3
- Vishay SiDR140DP Type N-Channel MOSFET, 100 A, 25 V Enhancement, 8-Pin SO-8 SIDR140DP-T1-RE3
- Vishay Siliconix TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SiDR392DP-T1-GE3
- Vishay Type N-Channel MOSFET, 430 A, 20 V Enhancement, 8-Pin SO-8 SIR178DP-T1-RE3
- Vishay TrenchFET N-Channel MOSFET, 350.8 A, 30 V Enhancement, 8-Pin SO-8 SiR500DP-T1-RE3
