Vishay SI N-Channel Single MOSFETs, 3.4 A, 30 V Enhancement Mode, 6-Pin P SIA432BDJ-T1-GE3
- RS 제품 번호:
- 829-363
- 제조사 부품 번호:
- SIA432BDJ-T1-GE3
- 제조업체:
- Vishay
N
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit)*
₩380.00
재고있음
- 추가로 2026년 10월 05일 부터 6,000 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 |
|---|---|
| 1 - 24 | ₩380.00 |
| 25 - 99 | ₩246.00 |
| 100 - 499 | ₩156.00 |
| 500 + | ₩134.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 829-363
- 제조사 부품 번호:
- SIA432BDJ-T1-GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 3.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | P | |
| Series | SI | |
| Mount Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.0192Ω | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 15.6W | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.75mm | |
| Length | 2.05mm | |
| Width | 2.05mm | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 3.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type P | ||
Series SI | ||
Mount Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.0192Ω | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 15.6W | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Height 0.75mm | ||
Length 2.05mm | ||
Width 2.05mm | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Vishay high-performance N-Channel MOSFET designed for efficient power management in various applications. Its robust construction enables reliable function under demanding conditions.
30 V drain-source voltage facilitates versatile application range
Max on-state resistance of 0.0192 Ohm at 10 V enhances power efficiency
Configured as a single device, optimising space and performance
Designed with TrenchFET technology for superior switching capabilities
관련된 링크들
- Vishay SI N channel-Channel Single MOSFETs, 6 A, 30 V Enhancement Mode, 8-Pin TSOP-6 SI7804BDN-T1-GE3
- Vishay SI N channel-Channel Single MOSFETs, 6 A, 30 V Enhancement Mode, 6-Pin TSOP-6 SI3410BDV-T1-GE3
- Vishay TrenchFET N-Channel Single MOSFETs, 2.5 A, 20 V Enhancement Mode, 6-Pin TSOP-6 SI3552BDV-T1-GE3
- Vishay SI2122DS Type N-Channel Single MOSFETs, 2.17 A, 100 V Enhancement, 3-Pin PowerPAK SI2122DS-T1-GE3
- Vishay SI3122DV Type N-Channel Single MOSFETs, 1.95 A, 100 V Enhancement, 6-Pin PowerPAK SI3122DV-T1-GE3
- Vishay SIA Type N-Channel MOSFET, 31 A, 40 V Enhancement, 7-Pin SC-70 SIA4446DJ-T1-GE3
- Vishay SI N channel-Channel Single MOSFETs, 149 A, 80 V Enhancement Mode, 8-Pin P SIR580LDP-T1-UE3
- Vishay SiA461DJ Type P-Channel MOSFET, 12 A, 20 V Enhancement, 6-Pin SC-70 SIA461DJ-T1-GE3