Vishay SISS N-Channel Single MOSFETs, 33.7 A, 80 V Enhancement Mode, 8-Pin P SISS128LDN-T1-UE3
- RS 제품 번호:
- 829-346
- 제조사 부품 번호:
- SISS128LDN-T1-UE3
- 제조업체:
- Vishay
N
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit)*
₩1,898.00
일시적 품절
- 2027년 11월 02일 부터 배송
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수량 | 한팩당 |
|---|---|
| 1 - 24 | ₩1,898.00 |
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| 500 - 999 | ₩714.00 |
| 1000 + | ₩692.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 829-346
- 제조사 부품 번호:
- SISS128LDN-T1-UE3
- 제조업체:
- Vishay
사양
참조 문서
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 33.7A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | P | |
| Series | SISS | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0156Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Power Dissipation Pd | 39W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 13.5nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Width | 3.3mm | |
| Length | 3.3mm | |
| Height | 1.04mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 33.7A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type P | ||
Series SISS | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0156Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Power Dissipation Pd 39W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 13.5nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Width 3.3mm | ||
Length 3.3mm | ||
Height 1.04mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay high-performance N-Channel MOSFET designed for efficient power management in a Compact package, ensuring reliable operation across various demanding applications.
TrenchFET Gen IV technology enables improved efficiency and thermal performance
Low RDS(on) values, optimising conduction losses during operation
Tested for high reliability with 100% R and UIS stressed units
Robust specifications with a 80V drain-source voltage rating and a maximum current of 33.7A
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