제조사부품번호

ROHM N channel-Channel MOSFET, 12 A, 60 V, 8-Pin HSMT RQ3L120BLFRATCB

RS 제품 번호:: 780-679
제조사 부품 번호:: RQ3L120BLFRATCB
제조업체:: ROHM

ROHM N channel-Channel MOSFET, 12 A, 60 V, 8-Pin HSMT RQ3L120BLFRATCB

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RS 제품 번호:: 780-679
제조사 부품 번호:: RQ3L120BLFRATCB
제조업체:: ROHM

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	ROHM
	Product Type	MOSFET
	Channel Type	N channel
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	60V
	Package Type	HSMT
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	40mΩ
	Typical Gate Charge Qg @ Vgs	7.5nC
	Maximum Power Dissipation Pd	40W
	Maximum Gate Source Voltage Vgs	10V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	3.3mm
	Height	0.9mm
	Width	3.1mm
	Standards/Approvals	RoHS Compliant
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 ROHM
	Product Type MOSFET
	Channel Type N channel
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 60V
	Package Type HSMT
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 40mΩ
	Typical Gate Charge Qg @ Vgs 7.5nC
	Maximum Power Dissipation Pd 40W
	Maximum Gate Source Voltage Vgs 10V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 3.3mm
	Height 0.9mm
	Width 3.1mm
	Standards/Approvals RoHS Compliant
	Automotive Standard AEC-Q101

Datasheet - RQ3L120BLFRATCB

The ROHM Power MOSFET delivers high-performance N-channel switching for automotive power management. This AEC-Q101 qualified device is engineered for ADAS and body control systems, ensuring efficient operation in demanding vehicle environments up to 150°C.

Drain to source voltage of 60 V

Continuous drain current of 12 A

35 mΩ typical on-resistance at 10 V

Low gate charge of 7.5 nC for fast switching

ROHM N channel-Channel MOSFET, 12 A, 60 V, 8-Pin HSMT RQ3L120BLFRATCB

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