Vishay TrenchFET N channel-Channel MOSFET, 124 A, 40 V Enhancement, 8-Pin 1212-F SISD4402DN-T1-UE3
- RS 제품 번호:
- 735-203
- 제조사 부품 번호:
- SISD4402DN-T1-UE3
- 제조업체:
- Vishay
N
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit)*
₩2,680.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩2,680.00 |
| 10 - 24 | ₩2,560.00 |
| 25 - 99 | ₩2,520.00 |
| 100 - 499 | ₩2,460.00 |
| 500 + | ₩2,380.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 735-203
- 제조사 부품 번호:
- SISD4402DN-T1-UE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 124A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | 1212-F | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0031Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 57W | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Length | 3.3mm | |
| Width | 3.3mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 124A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type 1212-F | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0031Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 57W | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Length 3.3mm | ||
Width 3.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N channel MOSFET is built for high-efficiency power conversion and control in demanding electronic systems. it ensures robust performance with comprehensive testing, while maintaining compliance with environmental standards. its versatility makes it Ideal for applications requiring reliable rectification, Compact dc/dc solutions, and precise motor drive control.
Provides 100% Rg and UIS testing for proven reliability
Ensures RoHS compliance for environmental safety
Delivers halogen-free construction for eco-friendly design
Supports synchronous rectification for efficient power conversion
Enables motor drive control with dependable switching performance
관련된 링크들
- Vishay TrenchFET N channel-Channel MOSFET, 85 A, 60 V Enhancement, 8-Pin 1212-F SISD4604DN-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET, 59 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8S SISS516DN-T1-UE3
- Vishay SISD Type N-Channel MOSFET, 198 A, 30 V Enhancement, 8-Pin 1212-F SISD5300DN-T1-GE3
- Vishay TrenchFET N channel-Channel MOSFET, 70.6 A, 80 V Enhancement, 8-Pin PowerPAK 1212-8S SISS586DN-T1-UE3
- Vishay SiS N channel-Channel MOSFET, 198 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SiSD5300DN
- Vishay SiS N channel-Channel MOSFET, 55 A, 100 V Enhancement, 8-Pin PowerPAK 1212 SiSD5110DN
- Vishay SiS N channel-Channel MOSFET, 64 A, 80 V Enhancement, 8-Pin PowerPAK 1212 SiSD5806DN
- Vishay TrenchFET P-Channel MOSFET, -136.7 A, -20 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5207DN-T1-UE3
