Vishay SiS N channel-Channel MOSFET, 64 A, 80 V Enhancement, 8-Pin PowerPAK 1212 SiSD5806DN
- RS 제품 번호:
- 735-136
- 제조사 부품 번호:
- SiSD5806DN
- 제조업체:
- Vishay
N
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit)*
₩3,198.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩3,198.00 |
| 10 - 24 | ₩2,080.00 |
| 25 - 99 | ₩1,096.00 |
| 100 - 499 | ₩1,052.00 |
| 500 + | ₩1,028.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 735-136
- 제조사 부품 번호:
- SiSD5806DN
- 제조업체:
- Vishay
사양
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SiS | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0069Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 57W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Forward Voltage Vf | 80V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 1mm | |
| Length | 4mm | |
| Width | 4mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SiS | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0069Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 57W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Forward Voltage Vf 80V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 1mm | ||
Length 4mm | ||
Width 4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Vishay N-Channel MOSFET rated for 80V drain-source voltage, specifically engineered for low-loss operation in AI power server solutions and high-efficiency DC/DC converters.
64A continuous drain current at TC=25°C
57W maximum power dissipation
33nC maximum total gate charge
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