Vishay SiR N channel-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin PowerPAK SO-8 SiR638ADP
- RS 제품 번호:
- 735-146
- 제조사 부품 번호:
- SiR638ADP
- 제조업체:
- Vishay
N
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit)*
₩4,034.55
일시적 품절
- 2026년 10월 05일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩4,034.55 |
| 10 - 24 | ₩2,616.90 |
| 25 - 99 | ₩1,372.80 |
| 100 - 499 | ₩1,351.35 |
| 500 + | ₩1,308.45 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 735-146
- 제조사 부품 번호:
- SiR638ADP
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK SO-8 | |
| Series | SiR | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00088Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 40V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 7mm | |
| Standards/Approvals | RoHS | |
| Width | 6mm | |
| Height | 2mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK SO-8 | ||
Series SiR | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00088Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 40V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Operating Temperature 150°C | ||
Length 7mm | ||
Standards/Approvals RoHS | ||
Width 6mm | ||
Height 2mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-Channel MOSFET rated for 40V drain-source voltage, optimized for high power density DC/DC converters in AI server applications. It delivers ultra-low on-resistance of 0.88mΩ maximum at 10V gate drive for superior conduction efficiency in synchronous rectification circuits.
147S forward trans conductance
110nC total gate charge at 10V VGS
Qgd/Qgs ratio less than 1 for optimized switching
관련된 링크들
- Vishay SiR Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin SO-8 SIR638ADP-T1-UE3
- Vishay SiR870ADP Type N-Channel MOSFET, 60 A, 100 V Enhancement, 8-Pin SO-8 SIR870ADP-T1-GE3
- Vishay SiR626ADP Type N-Channel MOSFET, 165 A, 60 V Enhancement, 8-Pin SO-8 SiR626ADP-T1-RE3
- Vishay SiR180ADP Type N-Channel MOSFET, 137 A, 60 V Enhancement, 8-Pin SO-8 SiR180ADP-T1-RE3
- Vishay SiR N channel-Channel MOSFET, 100 A, 100 V Enhancement, 8-Pin PowerPAK SO-8 SiR5102DP
- Vishay SiR N channel-Channel MOSFET, 126 A, 100 V Enhancement, 8-Pin PowerPAK SO-8 SiR510DP
- Vishay SiR N channel-Channel MOSFET, 146 A, 80 V Enhancement, 8-Pin PowerPAK SO-8 SiR580DP
- Vishay SiR N channel-Channel MOSFET, 100 A, 60 V Enhancement, 8-Pin PowerPAK SO-8 SiR626DP