ROHM AG191FLD3HRB Type N-Channel Single MOSFETs, 80 A, 60 V Enhancement, 3-Pin TO-252 (TL) AG191FLD3HRBTL
- RS 제품 번호:
- 687-454
- 제조사 부품 번호:
- AG191FLD3HRBTL
- 제조업체:
- ROHM
N
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대량 구매 할인 기용 가능
Subtotal (1 tape of 2 units)*
₩3,594.56
일시적 품절
- 2026년 1월 20일 부터 배송
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수량 | 한팩당 | Per Tape* |
|---|---|---|
| 2 - 18 | ₩1,797.28 | ₩3,594.56 |
| 20 - 48 | ₩1,586.72 | ₩3,173.44 |
| 50 - 198 | ₩1,419.40 | ₩2,838.80 |
| 200 - 998 | ₩1,146.80 | ₩2,291.72 |
| 1000 + | ₩1,124.24 | ₩2,248.48 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 687-454
- 제조사 부품 번호:
- AG191FLD3HRBTL
- 제조업체:
- ROHM
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 (TL) | |
| Series | AG191FLD3HRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Power Dissipation Pd | 76W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Length | 10.50mm | |
| Width | 6.80 mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 (TL) | ||
Series AG191FLD3HRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Power Dissipation Pd 76W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Length 10.50mm | ||
Width 6.80 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The ROHM Power MOSFET is engineered for high-performance applications, providing exceptional efficiency with a maximum Drain-Source voltage of 60V and a continuous drain current of 80A. Designed for demanding automotive systems, this device features low on-resistance, ensuring reduced power loss and enhanced thermal management. Its robust construction includes AEC-Q101 qualification, making it suitable for use in rigorous automotive environments. With a multidimensional thermal resistance capability, this MOSFET effectively handles thermal stress, ensuring reliability under varying operational conditions. Ideal for engineers seeking a reliable component in high-efficiency applications, the AG191FLD3HRB stands out for its performance and operational integrity.
Low on resistance offers improved efficiency and reduces heat generation
Pb free plating conforms to RoHS standards for environmental safety
100% avalanche testing guarantees reliable performance under stress
AEC Q101 qualified, ensuring compliance with automotive industry standards
Supports a wide operating junction and storage temperature range from -55°C to 175°C
Flexible packaging specifications with tape and reel format for convenience in assembly
Integrated thermal resistance minimizes thermal concerns during operation
Supplied with precise gate charge characteristics for optimal switching performance
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