ROHM AG091FLD3HRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) AG091FLD3HRBTL
- RS 제품 번호:
- 687-462
- 제조사 부품 번호:
- AG091FLD3HRBTL
- 제조업체:
- ROHM
N
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대량 구매 할인 기용 가능
Subtotal (1 tape of 2 units)*
₩3,466.72
일시적 품절
- 100 개 단위 배송 준비 완료
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수량 | 한팩당 | Per Tape* |
|---|---|---|
| 2 - 18 | ₩1,733.36 | ₩3,468.60 |
| 20 - 48 | ₩1,522.80 | ₩3,047.48 |
| 50 - 198 | ₩1,376.16 | ₩2,754.20 |
| 200 - 998 | ₩1,103.56 | ₩2,207.12 |
| 1000 + | ₩1,082.88 | ₩2,165.76 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 687-462
- 제조사 부품 번호:
- AG091FLD3HRBTL
- 제조업체:
- ROHM
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 (TL) | |
| Series | AG091FLD3HRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 76W | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Length | 10.50mm | |
| Width | 6.80 mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 (TL) | ||
Series AG091FLD3HRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 76W | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Length 10.50mm | ||
Width 6.80 mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
The ROHM N channel Power MOSFET designed for automotive applications, providing exceptional efficiency and reliability. With a maximum drain-source voltage of 60V and a continuous drain current capacity of 80A, this MOSFET ensures optimal performance in demanding environments. Its low on-resistance of 7.5mΩ significantly reduces power losses, making it suitable for various automotive systems and high-current applications. The device is RoHS compliant with Pb-free plating, ensuring environmental safety while maintaining robust performance under stringent conditions.
Low on resistance for improved efficiency and reduced heat generation
AEC Q101 qualified, ensuring high reliability in automotive applications
100% avalanche tested for enhanced safety and durability
Wide operating junction temperature range from -55 to +175 °C for versatile use
Robust power dissipation capacity of 76W to handle significant loads
Tape packaging facilitates ease of handling and assembly in manufacturing environments
Embossed packaging specifications ensure secure dynamics during transport
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