ROHM AG501EGD3HRB Type P-Channel Single MOSFETs, -40 V Enhancement, 3-Pin TO-252 (TL) AG501EGD3HRBTL
- RS 제품 번호:
- 687-359
- 제조사 부품 번호:
- AG501EGD3HRBTL
- 제조업체:
- ROHM
N
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대량 구매 할인 기용 가능
Subtotal (1 tape of 2 units)*
₩6,098.72
일시적 품절
- 2026년 1월 20일 부터 배송
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수량 | 한팩당 | Per Tape* |
|---|---|---|
| 2 - 18 | ₩3,049.36 | ₩6,096.84 |
| 20 - 48 | ₩2,680.88 | ₩5,359.88 |
| 50 - 198 | ₩2,406.40 | ₩4,814.68 |
| 200 - 998 | ₩1,943.92 | ₩3,889.72 |
| 1000 + | ₩1,891.28 | ₩3,784.44 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 687-359
- 제조사 부품 번호:
- AG501EGD3HRBTL
- 제조업체:
- ROHM
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | TO-252 (TL) | |
| Series | AG501EGD3HRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Maximum Power Dissipation Pd | 142W | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.80 mm | |
| Length | 10.50mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type TO-252 (TL) | ||
Series AG501EGD3HRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Maximum Power Dissipation Pd 142W | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Maximum Operating Temperature 175°C | ||
Width 6.80 mm | ||
Length 10.50mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The ROHM P channel power MOSFET designed for efficient energy management in automotive systems and various applications. Featuring a maximum Drain-Source voltage of -40V and a continuous drain current capability of up to -80A, this robust device delivers exceptional reliability under demanding operating conditions. With a low on-resistance of just 4.9mΩ, it ensures minimal energy loss, contributing to improved overall system efficiency and thermal performance. This MOSFET is also AEC-Q101 qualified, highlighting its suitability for automotive applications where stringent standards must be met.
Offers low on resistance for reduced power loss and enhanced efficiency
AEC Q101 qualified, ensuring reliability for automotive and critical applications
Avalanche tested to guarantee performance under dynamic conditions
Supports a maximum power dissipation of 142W, compatible with high-performance designs
Wide operating temperature range from -55°C to 175°C, allowing use in diverse environments
Pb free plating and RoHS compliant, meeting modern environmental standards
Optimised packaging specifications, including embedding options for automated assembly
Provides a guaranteed avalanche energy rating, ensuring robust operation during transient events
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