ROHM HT8KF6H Dual N-Channel Single MOSFETs, 150 V Enhancement, 8-Pin HSMT-8
- RS 제품 번호:
- 687-371P
- 제조사 부품 번호:
- HT8KF6HTB1
- 제조업체:
- ROHM
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal 20 units (supplied on a continuous strip)*
₩25,400.00
재고있음
- 100 개 단위 배송 준비 완료
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수량 | 한팩당 |
|---|---|
| 20 - 48 | ₩1,270.00 |
| 50 + | ₩1,140.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 687-371P
- 제조사 부품 번호:
- HT8KF6HTB1
- 제조업체:
- ROHM
사양
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Channel Type | Dual N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | HSMT-8 | |
| Series | HT8KF6H | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 214mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 14W | |
| Typical Gate Charge Qg @ Vgs | 6.4nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Standards/Approvals | RoHS | |
| Length | 3.45mm | |
| Width | 3.4mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Channel Type Dual N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type HSMT-8 | ||
Series HT8KF6H | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 214mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 14W | ||
Typical Gate Charge Qg @ Vgs 6.4nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Standards/Approvals RoHS | ||
Length 3.45mm | ||
Width 3.4mm | ||
Automotive Standard No | ||
The ROHM N channel power MOSFET designed for efficient power management in various applications. This component provides robust electrical characteristics, including a maximum continuous drain current of ±7.0A, ensuring reliable operation under high loads. Its Pb-free and halogen-free materials meet RoHS standards, contributing to environmentally friendly designs. This MOSFET's thermal resistance is optimised, allowing for effective heat dissipation, thus improving device longevity and performance in various electronic applications.
Low on resistance for improved efficiency
High power capacity in a compact HSMT8 mould package
Complies with RoHS regulations with Pb free plating
Halogen-free design to support eco-friendly initiatives
Versatile application in motor drives and power management systems
High maximum junction temperature rating of 150°C
Impressive maximum power dissipation of 14W
Reliable avalanche characteristics with a maximum energy of 0.24mJ
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