제조사부품번호

ROHM R8019KNZ4 N-Channel Single MOSFETs, 800 V Enhancement, 3-Pin TO-247 R8019KNZ4C13

RS 제품 번호:: 687-367P
제조사 부품 번호:: R8019KNZ4C13
제조업체:: ROHM

ROHM R8019KNZ4 N-Channel Single MOSFETs, 800 V Enhancement, 3-Pin TO-247 R8019KNZ4C13

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Subtotal 20 units (supplied in a tray)*

₩193,600.00

일시적 품절

2027년 2월 12일 부터 배송

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수량	한팩당
20 - 98	₩9,680.00
100 - 198	₩8,680.00
200 +	₩8,430.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 687-367P
제조사 부품 번호:: R8019KNZ4C13
제조업체:: ROHM

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모두 선택	제품 정보	값
	브랜드	ROHM
	Channel Type	N
	Product Type	Single MOSFETs
	Maximum Drain Source Voltage Vds	800V
	Series	R8019KNZ4
	Package Type	TO-247
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.265Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	65nC
	Maximum Power Dissipation Pd	208W
	Maximum Operating Temperature	150°C
	Height	5.22mm
	Standards/Approvals	RoHS
	Length	40mm
	Width	16.24mm
	Automotive Standard	No

	모두 선택
	브랜드 ROHM
	Channel Type N
	Product Type Single MOSFETs
	Maximum Drain Source Voltage Vds 800V
	Series R8019KNZ4
	Package Type TO-247
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.265Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 65nC
	Maximum Power Dissipation Pd 208W
	Maximum Operating Temperature 150°C
	Height 5.22mm
	Standards/Approvals RoHS
	Length 40mm
	Width 16.24mm
	Automotive Standard No

Datasheet - R8019KNZ4C13

The ROHM N channel MOSFET designed for high-efficiency performance in electronic applications. Featuring a maximum Drain-Source voltage of 800V and a continuous drain current capability of 19A, this device effectively manages significant power loads while maintaining low on-resistance. Engineered with advanced switching capabilities, it provides rapid response times essential for efficient circuit operation. The encapsulation in a TO-247G package ensures straightforward mounting and excellent thermal performance, making it ideal for power management in everything from industrial systems to consumer electronics.

Low on resistance of just 0.265Ω, enhancing energy efficiency

Rated for continuous drain current of ±19A, allowing substantial power handling

Fast switching performance optimises the operation of dynamic circuits

Pb free lead plating ensures compliance with environmental standards

Robust avalanche ratings support reliable operation in transient conditions

Ideal for parallel usage, simplifying multiple device configurations.

ROHM R8019KNZ4 N-Channel Single MOSFETs, 800 V Enhancement, 3-Pin TO-247 R8019KNZ4C13

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