Name: ROHM RD3E08BBJHRB Type P-Channel Single MOSFETs, 80 A, -30 V Enhancement, 3-Pin TO-252 (TL)
Brand: ROHM
SKU: 687-362P
Availability: InStock

수량수량 선택 또는 입력

재고있음

추가로 2026년 11월 09일 부터 84 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

생산용 포장 (RS 제품 번호에 P를 포함)

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	ROHM
	Product Type	Single MOSFETs
	Channel Type	Type P
	Maximum Continuous Drain Current Id	80A
	Maximum Drain Source Voltage Vds	-30V
	Package Type	TO-252 (TL)
	Series	RD3E08BBJHRB
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.7mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	142W
	Typical Gate Charge Qg @ Vgs	150nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	5V
	Maximum Operating Temperature	175°C
	Height	2.3mm
	Length	10.5mm
	Standards/Approvals	AEC-Q101, RoHS
	Width	6.8mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 ROHM
	Product Type Single MOSFETs
	Channel Type Type P
	Maximum Continuous Drain Current Id 80A
	Maximum Drain Source Voltage Vds -30V
	Package Type TO-252 (TL)
	Series RD3E08BBJHRB
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.7mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 142W
	Typical Gate Charge Qg @ Vgs 150nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 5V
	Maximum Operating Temperature 175°C
	Height 2.3mm
	Length 10.5mm
	Standards/Approvals AEC-Q101, RoHS
	Width 6.8mm
	Automotive Standard AEC-Q101

The ROHM Power MOSFET designed for demanding applications requiring low on-resistance and high current handling capabilities. This robust device operates at a maximum drain-source voltage of -30V and a continuous drain current of ±80A, ensuring efficient performance in power management systems. Its innovative construction includes a thermal resistance of just 1.05 °C/W, optimising reliability and facilitating effective heat dissipation. With AEC-Q101 qualification, this MOSFET is suitable for automotive applications, thriving in environments prone to extreme temperature variations and ensuring dependable operation under challenging conditions.

Delivers low on resistance of 3.7 mΩ, enhancing efficiency and minimising energy loss

Pulsed drain current capability of ±160A, accommodating high-demand applications

Gate-source voltage ratings of +5/-20V ensure versatile operation and robust control

Assemblable in a DPAK package for efficient thermal management and compact footprint

Avalanche tested for improved reliability in high-stress electrical environments

AEC Q101 qualified, making it ideal for safety-critical automotive applications.

₩56,000.00

₩2,800.00/unit

수량	한팩당
20 - 48	₩2,800.00
50 - 198	₩2,510.00
200 - 998	₩2,440.00
1000 +	₩2,370.00

ROHM RD3E08BBJHRB Type P-Channel Single MOSFETs, 80 A, -30 V Enhancement, 3-Pin TO-252 (TL)

대량 구매 가격 책정 옵션

관련된 링크들