제조사부품번호

ROHM RY7P250BM N-Channel Single MOSFETs, 100 V Enhancement, 8-Pin DFN8080T8LSHAAI

RS 제품 번호:: 687-343P
제조사 부품 번호:: RY7P250BMTBC
제조업체:: ROHM

ROHM RY7P250BM N-Channel Single MOSFETs, 100 V Enhancement, 8-Pin DFN8080T8LSHAAI

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Subtotal 20 units (supplied on a continuous strip)*

₩187,000.00

추가로 2026년 9월 14일 부터 178 개 단위 배송
추가로 2026년 11월 26일 부터 200 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당
20 - 98	₩9,350.00
100 - 198	₩8,390.00
200 +	₩8,140.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 687-343P
제조사 부품 번호:: RY7P250BMTBC
제조업체:: ROHM

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모두 선택	제품 정보	값
	브랜드	ROHM
	Product Type	Single MOSFETs
	Channel Type	N
	Maximum Drain Source Voltage Vds	100V
	Series	RY7P250BM
	Package Type	DFN8080T8LSHAAI
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.86mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	340W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	240nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Height	0.8mm
	Length	1.7mm
	Width	1.7mm
	Automotive Standard	No

	모두 선택
	브랜드 ROHM
	Product Type Single MOSFETs
	Channel Type N
	Maximum Drain Source Voltage Vds 100V
	Series RY7P250BM
	Package Type DFN8080T8LSHAAI
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.86mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 340W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 240nC
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Height 0.8mm
	Length 1.7mm
	Width 1.7mm
	Automotive Standard No

Datasheet - RY7P250BMTBC

The ROHM Power MOSFET designed for demanding applications requiring excellent efficiency and reliability. This MOSFET is ideal for use in Hot Swap Controllers and other power switching applications, where its low on-resistance of 1.86mΩ ensures minimal energy loss during operation. This component is RoHS and halogen-free, making it a safe choice for environmentally conscious designs. With advanced features like 100% Rg and UIS testing, it guarantees robust performance under varying conditions, making it suitable for high-performance and high-reliability electronic circuits.

Low on resistance for enhanced efficiency

Wide-SOA characteristics for superior reliability

Designed to handle continuous drain currents up to 250A

High pulsed drain current capability at ±900A

Excellent thermal management with thermal resistance of 0.44°C/W

Suitable for a wide operating temperature range of -55 to +175°C

Complies with RoHS and halogen-free standards.

ROHM RY7P250BM N-Channel Single MOSFETs, 100 V Enhancement, 8-Pin DFN8080T8LSHAAI

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