Vishay SISS5812DN N-Channel Single MOSFETs, 42.8 A, 80 V Enhancement, 8-Pin PowerPAK SISS5812DN-T1-GE3

모든 MOSFETs 열람하기

Subtotal (1 reel of 3000 units)*

₩2,772,000.00

Add to Basket
수량 선택 또는 입력
마지막 RS 재고
  • 최종적인 6,000 개 unit(s)이 배송 준비 됨
수량
한팩당
릴당*
3000 +₩924.00₩2,769,000.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
653-132
제조사 부품 번호:
SISS5812DN-T1-GE3
제조업체:
Vishay
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Vishay

Product Type

Single MOSFETs

Channel Type

N

Maximum Continuous Drain Current Id

42.8A

Maximum Drain Source Voltage Vds

80V

Series

SISS5812DN

Package Type

PowerPAK

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0135Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

44.6W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

10nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.4mm

Width

3.4mm

Height

830μm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay TrenchFET Gen V N-Channel Power MOSFET rated for 80 V drain-source voltage. Packaged in a Compact PowerPAK 1212-8S, it's Ideal for AI server power solutions, DC/DC converters, and load switching.

Pb Free

Halogen free

RoHS compliant

관련된 링크들