Vishay SISS5208DN N-Channel Single MOSFETs, 172 A, 20 V Enhancement, 8-Pin PowerPAK

RS 제품 번호:: 653-149
제조사 부품 번호:: SISS5208DN-T1-GE3
제조업체:: Vishay

Vishay SISS5208DN N-Channel Single MOSFETs, 172 A, 20 V Enhancement, 8-Pin PowerPAK

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 tape of 1 unit)*

₩2,020.00

추가로 2026년 9월 14일 부터 5,950 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

Tape(s)	Per Tape
1 - 24	₩2,020.00
25 - 99	₩1,980.00
100 - 499	₩1,900.00
500 - 999	₩1,620.00
1000 +	₩1,540.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 653-149
제조사 부품 번호:: SISS5208DN-T1-GE3
제조업체:: Vishay

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	Single MOSFETs
	Channel Type	N
	Maximum Continuous Drain Current Id	172A
	Maximum Drain Source Voltage Vds	20V
	Package Type	PowerPAK
	Series	SISS5208DN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0013Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	24.6nC
	Maximum Power Dissipation Pd	56.8W
	Forward Voltage Vf	1.1V
	Maximum Gate Source Voltage Vgs	8V
	Maximum Operating Temperature	150°C
	Height	0.83mm
	Length	3.4mm
	Standards/Approvals	RoHS
	Width	3.4mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type Single MOSFETs
	Channel Type N
	Maximum Continuous Drain Current Id 172A
	Maximum Drain Source Voltage Vds 20V
	Package Type PowerPAK
	Series SISS5208DN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0013Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 24.6nC
	Maximum Power Dissipation Pd 56.8W
	Forward Voltage Vf 1.1V
	Maximum Gate Source Voltage Vgs 8V
	Maximum Operating Temperature 150°C
	Height 0.83mm
	Length 3.4mm
	Standards/Approvals RoHS
	Width 3.4mm
	Automotive Standard No

Datasheet - SISS5208DN-T1-GE3

COO (Country of Origin):: CN

Vishay SISS5208DN Series Single MOSFETs, 56.8W Maximum Power Dissipation, 20V Maximum Drain Source Voltage - SISS5208DN-T1-GE3

This single MOSFETs device is an N-channel enhancement transistor designed for high-current switching in compact surface-mount applications. It operates across a wide temperature range and is intended for situations requiring low conduction losses and rapid gate-driven switching. The package supports mounting on PCB land patterns where thermal and electrical performance are priorities.

Features and Benefits:

• Very low on-resistance 0.0013Ω reduces conduction losses
• High continuous drain current 172A supports heavy loads
• Low forward voltage 1.1V improves efficiency under load
• Gate charge 24.6nC enables controlled switching speed
• Maximum power dissipation 56.8W manages elevated thermal stress
• Gate-source withstand 8V permits robust drive margin

Applications

• Suitable for synchronous buck converter power stages
• Ideal for high-current motor driver outputs
• Used with server power distribution circuits
• Can be used for battery protection and management
• Suitable for telecom rectifier and power-supply rails

What voltage stress can it withstand between drain and source?

It is rated to tolerate up to 20V between drain and source under normal conditions.

How does the device behave in extreme temperatures?

It is specified to operate from -55°C up to 150°C, allowing it to function across typical industrial temperature ranges.

What mounting style is required for assembly?

It is supplied in a PowerPAK surface-mount package, intended for PCB solder attachment using standard reflow processes.

How many electrical connections does it provide?

The device has an eight-pin configuration to facilitate power and gate connections while optimising thermal paths.