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Microchip TN2510 Type N-Channel Single MOSFETs, 0.73 A, 100 V Enhancement, 3-Pin SOT-89 TN2510N8-G

RS 제품 번호:: 649-584
제조사 부품 번호:: TN2510N8-G
제조업체:: Microchip

Microchip TN2510 Type N-Channel Single MOSFETs, 0.73 A, 100 V Enhancement, 3-Pin SOT-89 TN2510N8-G

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Subtotal (1 tape of 5 units)*

₩7,990.00

재고있음

1,475 개 단위 배송 준비 완료

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수량	한팩당	Per Tape*
5 - 45	₩1,598.00	₩7,988.12
50 - 245	₩1,404.36	₩7,021.80
250 - 495	₩1,261.48	₩6,307.40
500 +	₩1,000.16	₩5,002.68

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 649-584
제조사 부품 번호:: TN2510N8-G
제조업체:: Microchip

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모두 선택	제품 정보	값
	브랜드	Microchip
	Product Type	Single MOSFETs
	Channel Type	Type N
	Maximum Continuous Drain Current Id	0.73A
	Maximum Drain Source Voltage Vds	100V
	Package Type	SOT-89
	Series	TN2510
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.5Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.8V
	Maximum Power Dissipation Pd	1.6W
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	Lead (Pb)-free/RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Microchip
	Product Type Single MOSFETs
	Channel Type Type N
	Maximum Continuous Drain Current Id 0.73A
	Maximum Drain Source Voltage Vds 100V
	Package Type SOT-89
	Series TN2510
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.5Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.8V
	Maximum Power Dissipation Pd 1.6W
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals Lead (Pb)-free/RoHS
	Automotive Standard No

Datasheet - TN2510N8-G

The Microchip Low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

Microchip TN2510 Type N-Channel Single MOSFETs, 0.73 A, 100 V Enhancement, 3-Pin SOT-89 TN2510N8-G

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