Microchip N-Channel Vertical DMOS FET-Channel Single MOSFETs, 450 mA, 40 V Enhancement Mode, 3-Pin TO-92-3 (TO-226AA)
- RS 제품 번호:
- 598-673
- 제조사 부품 번호:
- TN0104N8-G
- 제조업체:
- Microchip
N
Subtotal (1 reel of 2000 units)*
₩2,944,080.00
일시적 품절
- 2026년 2월 03일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 2000 + | ₩1,472.04 | ₩2,942,576.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 598-673
- 제조사 부품 번호:
- TN0104N8-G
- 제조업체:
- Microchip
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참조 문서
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Microchip | |
| Channel Type | N-Channel Vertical DMOS FET | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 450mA | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-92-3 (TO-226AA) | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.8Ω | |
| Channel Mode | Enhancement Mode | |
| Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.3mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 4.2 mm | |
| Length | 4.2mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Microchip | ||
Channel Type N-Channel Vertical DMOS FET | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 450mA | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-92-3 (TO-226AA) | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.8Ω | ||
Channel Mode Enhancement Mode | ||
Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 150°C | ||
Height 5.3mm | ||
Standards/Approvals RoHS Compliant | ||
Width 4.2 mm | ||
Length 4.2mm | ||
Automotive Standard No | ||
The Microchip N Channel Enhancement-Mode Vertical low-threshold transistor is built using a vertical DMOS structure and a well-established silicon-gate manufacturing process. This design combines the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. Like all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
관련된 링크들
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