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Microchip TN2524 Type N-Channel MOSFET, 360 A, 240 V Enhancement, 3-Pin SOT-89

RS 제품 번호:: 264-8918
제조사 부품 번호:: TN2524N8-G
제조업체:: Microchip

Microchip TN2524 Type N-Channel MOSFET, 360 A, 240 V Enhancement, 3-Pin SOT-89

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Subtotal (1 reel of 2000 units)*

₩3,199,760.00

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2026년 2월 24일 부터 배송

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수량	한팩당	릴당*
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RS 제품 번호:: 264-8918
제조사 부품 번호:: TN2524N8-G
제조업체:: Microchip

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모두 선택	제품 정보	값
	브랜드	Microchip
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	360A
	Maximum Drain Source Voltage Vds	240V
	Package Type	SOT-89
	Series	TN2524
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	6mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.6W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	4.6mm
	Standards/Approvals	RoHS
	Width	2.6 mm
	Height	1.6mm
	Automotive Standard	No

	모두 선택
	브랜드 Microchip
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 360A
	Maximum Drain Source Voltage Vds 240V
	Package Type SOT-89
	Series TN2524
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 6mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.6W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 4.6mm
	Standards/Approvals RoHS
	Width 2.6 mm
	Height 1.6mm
	Automotive Standard No

Datasheet - TN2524N8-G

The Microchip N-Channel low threshold enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Low threshold (2.0V max.)

High input impedance

Low input capacitance (125pF max.)

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

Microchip TN2524 Type N-Channel MOSFET, 360 A, 240 V Enhancement, 3-Pin SOT-89

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