Microchip TN0106 Type N-Channel Single MOSFETs, 3.4 A, 60 V Enhancement, 3-Pin TO-92 TN0106N3-G
- RS 제품 번호:
- 598-395
- 제조사 부품 번호:
- TN0106N3-G
- 제조업체:
- Microchip
N
Subtotal (1 Bag of 1000 units)*
₩1,116,720.00
일시적 품절
- 2026년 2월 04일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Bag* |
|---|---|---|
| 1000 + | ₩1,116.72 | ₩1,117,096.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 598-395
- 제조사 부품 번호:
- TN0106N3-G
- 제조업체:
- Microchip
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Microchip | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-92 | |
| Series | TN0106 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | -55°C | |
| Length | 0.205in | |
| Standards/Approvals | RoHS | |
| Width | 0.165 in | |
| Height | 0.82in | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Microchip | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-92 | ||
Series TN0106 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature -55°C | ||
Length 0.205in | ||
Standards/Approvals RoHS | ||
Width 0.165 in | ||
Height 0.82in | ||
Automotive Standard No | ||
The Microchip N Channel Enhancement-Mode Vertical low-threshold transistor is built using a vertical DMOS structure and a well-established silicon-gate manufacturing process. This design combines the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. Like all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
관련된 링크들
- Microchip VN0106 Type N-Channel MOSFET, 350 A, 60 V Enhancement, 3-Pin TO-92 VN0106N3-G
- Microchip VN0106 Type N-Channel MOSFET, 350 A, 60 V Enhancement, 3-Pin TO-92
- Microchip VP0106 Type P-Channel MOSFET, 140 A, 30 V Enhancement, 3-Pin TO-92 VP0106N3-G
- Microchip TN0702 Type N-Channel MOSFET, 20 V Enhancement, 3-Pin TO-92 TN0702N3-G
- Microchip TN0604 Type N-Channel MOSFET, 40 V Enhancement, 3-Pin TO-92 TN0604N3-G
- Microchip TN0606 Type N-Channel MOSFET, 3 A, 60 V Enhancement, 3-Pin TO-92 TN0606N3-G
- Microchip TN2106 Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin TO-92 TN2106N3-G
- Microchip TN0610 Type N-Channel MOSFET, 500 A, 100 V Enhancement, 3-Pin TO-92 TN0610N3-G