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Microchip DN3135 Type N-Channel Single MOSFETs, 72 mA, 350 V Depletion, 3-Pin SOT-89 DN3135N8-G

RS 제품 번호:: 649-459
제조사 부품 번호:: DN3135N8-G
제조업체:: Microchip

Microchip DN3135 Type N-Channel Single MOSFETs, 72 mA, 350 V Depletion, 3-Pin SOT-89 DN3135N8-G

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₩6,899.60

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수량	한팩당	Per Tape*
5 - 45	₩1,379.92	₩6,895.84
50 - 245	₩1,214.48	₩6,076.16
250 - 495	₩1,088.52	₩5,444.48
500 +	₩861.04	₩4,308.96

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RS 제품 번호:: 649-459
제조사 부품 번호:: DN3135N8-G
제조업체:: Microchip

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모두 선택	제품 정보	값
	브랜드	Microchip
	Channel Type	Type N
	Product Type	Single MOSFETs
	Maximum Continuous Drain Current Id	72mA
	Maximum Drain Source Voltage Vds	350V
	Package Type	SOT-89
	Series	DN3135
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	35Ω
	Channel Mode	Depletion
	Maximum Gate Source Voltage Vgs	±20 V
	Forward Voltage Vf	1.8V
	Maximum Power Dissipation Pd	1.3W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	1.3 mm
	Length	2.9mm
	Standards/Approvals	Lead (Pb)-free/RoHS
	Height	1.12mm
	Automotive Standard	No

	모두 선택
	브랜드 Microchip
	Channel Type Type N
	Product Type Single MOSFETs
	Maximum Continuous Drain Current Id 72mA
	Maximum Drain Source Voltage Vds 350V
	Package Type SOT-89
	Series DN3135
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 35Ω
	Channel Mode Depletion
	Maximum Gate Source Voltage Vgs ±20 V
	Forward Voltage Vf 1.8V
	Maximum Power Dissipation Pd 1.3W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 1.3 mm
	Length 2.9mm
	Standards/Approvals Lead (Pb)-free/RoHS
	Height 1.12mm
	Automotive Standard No

Datasheet - DN3135N8-G

The Microchip Low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

High input impedance

Low input capacitance

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

Microchip DN3135 Type N-Channel Single MOSFETs, 72 mA, 350 V Depletion, 3-Pin SOT-89 DN3135N8-G

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