Microchip DN2450 N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 500 V Depletion Mode, 3-Pin TO-252 (D-PAK-3)

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₩2,669,600.00

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  • 2026년 4월 06일 부터 배송
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Per Reel*
2000 +₩1,334.80₩2,670,352.00

*price indicative

RS Stock No.:
598-247
Mfr. Part No.:
DN2450N8-G
Brand:
Microchip
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브랜드

Microchip

Channel Type

N-Channel DMOS FET

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

350mA

Maximum Drain Source Voltage Vds

500V

Series

DN2450

Package Type

TO-252 (D-PAK-3)

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

10Ω

Channel Mode

Depletion Mode

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.8V

Maximum Operating Temperature

150°C

Width

3 mm

Height

2.29mm

Length

4.4mm

Standards/Approvals

RoHS, ISO/TS‑16949

Automotive Standard

No

The Microchip Low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

High input impedance

Low input capacitance

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

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