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Microchip N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 500 V Depletion Mode, 3-Pin TO-252 (D-PAK-3) DN3545N8-G

RS 제품 번호:: 598-869
제조사 부품 번호:: DN3545N8-G
제조업체:: Microchip

Microchip N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 500 V Depletion Mode, 3-Pin TO-252 (D-PAK-3) DN3545N8-G

Subtotal (1 reel of 2000 units)*

₩2,944,080.00

일시적 품절

2026년 2월 02일 부터 배송

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수량	한팩당	릴당*
2000 +	₩1,472.04	₩2,942,576.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 598-869
제조사 부품 번호:: DN3545N8-G
제조업체:: Microchip

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모두 선택	제품 정보	값
	브랜드	Microchip
	Channel Type	N-Channel DMOS FET
	Product Type	Single MOSFETs
	Maximum Continuous Drain Current Id	350mA
	Maximum Drain Source Voltage Vds	500V
	Package Type	TO-252 (D-PAK-3)
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	10Ω
	Channel Mode	Depletion Mode
	Forward Voltage Vf	1.8V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2.5W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Width	3 mm
	Length	4.4mm
	Standards/Approvals	RoHS, ISO/TS‑16949
	Height	2.29mm
	Automotive Standard	No

	모두 선택
	브랜드 Microchip
	Channel Type N-Channel DMOS FET
	Product Type Single MOSFETs
	Maximum Continuous Drain Current Id 350mA
	Maximum Drain Source Voltage Vds 500V
	Package Type TO-252 (D-PAK-3)
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 10Ω
	Channel Mode Depletion Mode
	Forward Voltage Vf 1.8V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2.5W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Width 3 mm
	Length 4.4mm
	Standards/Approvals RoHS, ISO/TS‑16949
	Height 2.29mm
	Automotive Standard No

Datasheet - DN3545N8-G

The Microchip Depletion mode transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

High input impedance

Low input capacitance

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

Microchip N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 500 V Depletion Mode, 3-Pin TO-252 (D-PAK-3) DN3545N8-G

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