STMicroelectronics ST8L65 Type N-Channel Single MOSFETs, 58 A, 650 V Enhancement, 5-Pin PowerFLAT ST8L65N044M9
- RS 제품 번호:
- 648-109
- 제조사 부품 번호:
- ST8L65N044M9
- 제조업체:
- STMicroelectronics
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩10,565.60
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수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩10,565.60 |
| 10 - 49 | ₩8,554.00 |
| 50 - 99 | ₩6,561.20 |
| 100 + | ₩6,373.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 648-109
- 제조사 부품 번호:
- ST8L65N044M9
- 제조업체:
- STMicroelectronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | ST8L65 | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 44mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 166W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Length | 8.10mm | |
| Standards/Approvals | No | |
| Width | 8.10 mm | |
| Height | 0.95mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series ST8L65 | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 44mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 166W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Length 8.10mm | ||
Standards/Approvals No | ||
Width 8.10 mm | ||
Height 0.95mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. It has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Excellent switching performance
Easy to drive
100 percent avalanche tested
Excellent switching performance
PowerFLAT 8x8 HV package
RoHS compliant
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